Fabrication of nanoscale gaps using a combination of self-assembled molecular and electron beam lithographic techniques

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Negishi, R ^a,b   Hasegawa, T ^a,b   Terabe, K ^a,b   Aono, M ^a,b   Ebihara, T ^b   Tanaka, H ^c   Ogawa, T ^c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; FABRICATION; GOLD; SELF ASSEMBLY;

DODECANETHIOL; NANOGAPS;

NANOTECHNOLOGY;

EID: 33744822448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209208     Document Type: Article

References (24)

1. A. Bezryadin, C. Dekker, and G. Schmid, Appl. Phys. Lett. 71, 1273 (1997).
2. K. Liu, Ph. Avouris, J. Bucchignano, R. Martel, S. Sun, and J. Michl, Appl. Phys. Lett. 80, 865 (2002).
3. H. Park, J. Park, A. K. L. Lim, E. H. Anderson, A. P. Alivisatos, and P. L. McEuen, Nature (London) 407, 57 (2000).
4. D. Porath, A. Bezryadin, S. de Vries, and C. Dekker, Nature (London) 403, 635 (2000).
5. A. Bachtold, P. Hardly, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
6. P. Steinmann and J. M. R. Weaver, Appl. Phys. Lett. 86, 063104 (2005).
7. G. Philipp, T. Weimann, P. Hinze, M. Burghard, and J. Weis, Microelectron. Eng. 46, 157 (1999).
8. Y. Naitoh, K. Tsukagoshi, K. Murata, and W. Mizutani, e-J. Surf. Sci. Nanotechnol. 1, 41 (2003).
9. H. Park, A. K. L. Lim, A. P. Alivisatous, J. Park, and P. L. McEuen, Appl. Phys. Lett. 75, 301 (1999).
10. A. M. Morpurgo, C. M. Marcus, and D. B. Robinson, Appl. Phys. Lett. 74, 2084 (1999).
11. S. Boussaad and N. J. Tao, Appl. Phys. Lett. 80, 2398 (2002).
12. M. A. Reed, C. Zhou, C. J. Muller, T. P. Burgin, and J. M. Tour, Science 278, 252 (1997).
13. A. Hatzor and P. S. Weiss, Science 291, 1019 (2001).
14. M. E. Anderson, R. K. Smith, Z. J. Donhauser, A. Hatzor, P. A. Lewis, L. P. Tan, M. W. Horn, and P. S. Weiss, J. Vac. Sci. Technol. B 20, 2739 (2002).
15. M. E. Anderson, L. P. Tan, H. Tanaka, M. Mihok, H. Lee, M. W. Horn, and P. S. Weiss, J. Vac. Sci. Technol. B 21, 3116 (2003).
16. H. Tanaka, M. E. Anderson, M. W. Horn, and P. S. Weiss, Jpn. J. Appl. Phys., Part 1 43, L950 (2004).
17. G. S. McCarty, Nano Lett. 4, 1391 (2004).
18. S. D. Evans, A. Ulman, K. E. Goppert-Berarducci, and J. L. Gerenser, J. Am. Chem. Soc. 113, 5866 (1991).
19. V. Santhanam, J. Liu, R. Agarwal, and R. P. Andres, Langmuir 19, 7881 (2003).
20. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963).
21. M. Amman, R. Wilkins, E. Ben-Jacob, P. D. Marker, and R. C. Jaklevic, Phys. Rev. B 43, 1146 (1991).
22. A. E. Hanna and M. Tinkham, Phys. Rev. B 44, 5919 (1991).
23. C. Gao, F. Duewer, and X. D. Xiang, Appl. Phys. Lett. 75, 3005 (1999).
24. N. Asahi, M. Akazawa, and Y. Amemiya, IEEE Trans. Electron Devices 42, 1999 (1995).