Analysis of drain-to-body band-to-band tunneling in double gate MOSFET

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 159-160

  Ananthan, Hari ^a   Bansal, Aditya ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC EQUIPMENT; ELECTRON TUNNELING; MATHEMATICAL MODELS; MOS DEVICES; NETWORKS (CIRCUITS); PARAMETER ESTIMATION;

ANALYTICAL MODEL; BAND-TO-BAND TUNNELING LEAKAGE; DOUBLE-GATE MOS DEVICES; NANOSCALE SYMMETRIC;

MOSFET DEVICES;

EID: 33744754701     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563573     Document Type: Conference Paper

References (3)

1. J.G. Fossum et al., IEEE TED, 1999, pp. 2195-2200
2. ITRS 2004 Update: http://public.itrs.net
3. K. Suzuki et al., IEEE TED, 1996, pp. 732-738