Fabrication of self-aligned drain and source on insulator MOSFET with dielectric pocket by local SIMOX technology

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 99-100

  Lv, Zhichao ^a   Zhang, Hao ^a   Wang, Jian ^a   Tian, Lilin ^a   Li, Zhijian ^a   Sun, Jiaying ^b   Chen, Jing ^b   Wang, Xi ^b  

^a TSINGHUA UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744732998     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563550     Document Type: Conference Paper

References (6)

1. T.I.Kamins, et al, J.Appl.Phys, pp.423, 1988.
2. Y. Tian,et al, TED, pp.561, 2005.
3. P.He, et al, Int'l SOI conference, pp.55, 2002
4. Z.Zhang, et al, TED, pp.1002, 2004
5. M. Jurczak, et al, TED, pp.1770, 2001
6. He, PhD Thesis, Tsinghua University., 2003