A complementary gain cell technology for sub-1 v supply DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 1006-1008

  Shukuri, S ^a   Kure, T ^a   Nishida, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON DEVICES; VOLTAGE SCALING;

BIT-LINE ANDS; CELL PERFORMANCE; DRAM CELLS; GAIN CELL; MEMORY CELL; SCALING LIMITS; STORAGE CAPACITANCE; SUPPLY VOLTAGES;

CELLS;

EID: 33744655578     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307530     Document Type: Conference Paper

References (4)

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2. H. Shichijo, et al., SSDM Ext. Abs., p. 265, 1984.
3. K. Sunouchi et al., EDM Tech. Dig., p465, 1991.
4. C. Hsieh, et al., IEEE Trans. ED-30, No. 6, p686, 1983.