Properties of a GaAs single electron path switching node device using a single quantum dot for hexagonal BDD quantum circuits

Journal of Physics: Conference Series

Volumn 38, Issue 1, 2006, Pages 104-107

  Nakamura, Tatsuya ^a   Abe, Yuji ^a   Kasai, Seiya ^a   Hasegawa, Hideki ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744544665     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/38/1/026     Document Type: Article

References (7)

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4. Akers S B 1978 IEEE Trans. Compt. C 27 509
5. Asashi N, Akazawa M and Amemiya Y 1997 IEEE Trans. Electron Devices 44 1109
6. Kasai S and Hasegawa H 2001 Springer Proc. in Physics ICPS-25 issue part II p 1817
7. Nakajima F, Miyoshi Y, Motohisa J and Fukui T 2003 Appl. Phys. Lett. 83 2680