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Volumn 9, Issue 1-3, 2006, Pages 252-256

Non-contact charge-voltage method for dielectric characterization on small test areas of IC product wafers

Author keywords

Advanced dielectrics; Corona discharge; CV; Kelvin force; Non contact; Scribe line testing

Indexed keywords

CAPACITANCE; COMPUTER VISION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; IMPURITIES; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33744543900     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.042     Document Type: Article
Times cited : (11)

References (9)
  • 1
    • 33744541986 scopus 로고    scopus 로고
    • Diebold AC. Characterization and Metrology for ULSI Technology. In: AIP Conference Proceedings, vol. 683, 2003.
  • 2
    • 33744545735 scopus 로고    scopus 로고
    • Lagowski J, Edelman P, Marinskiy D, Kochey JN, Almeida C. A non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers, US Patent pending.
  • 6
    • 33744540761 scopus 로고    scopus 로고
    • Wilson M. In: Proceedings of Kar S, Singh R, Misra D, Iwai H, Houssa M, Morais J, Landheer D. (Eds.) Physics and Technology of High-k Gate Dielectrics II. Vol. 2003-22. Pennington, NJ: Electrochemical Society; 2003.
  • 7
    • 33744536991 scopus 로고    scopus 로고
    • Murray KD, Gross VP, Hobbs PCD. Clean corona ionization. EOS/ESD Technology December 1999/January 1992.
  • 9
    • 33744525831 scopus 로고    scopus 로고
    • Robertson J. MRS bulletin, 2002. p. 217.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.