Thermal-desorption induced enhancement and patterning of ultraviolet emission in chemically grown ZnO

Nanotechnology

Volumn 17, Issue 11, 2006, Pages 2789-2793

  Xie, Rongguo ^a,b   Li, Dongsheng ^a   Yang, Deren ^a   Sekiguchi, Takashi ^b   Jiang, Minhua ^a,c  

^a ZHEJIANG UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; DESORPTION; ELECTRON ABSORPTION; HEAT TREATMENT; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

OPTICAL NANOTAGS; THERMAL DESORPTION SPECTROSCOPY; THERMAL-DESORPTION; UV-EMISSION DISPLAYS;

ZINC OXIDE;

EID: 33744535772     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/11/011     Document Type: Article

References (27)

1. Zhang H, Yang D R, Ji Y J, Ma X Y, Xu J and Que D L 2004 J. Phys. Chem. B 108 3955
2. Ohashi N, Ebisawa N, Sekiguchi T, Sakaguchi I, Wada Y, Takenaka T and Haneda H 2005 Appl. Phys. Lett. 86 091902
3. Alivov Ya I, Kalinina E V, Cherenkov A E, Look D C, Ataev BM, Omaev A K, Chukichev M V and Bagnall D M 2003 Appl. Phys. Lett. 83 4719
4. Tsukazaki A et al 2005 Nat. Mater. 4 42
5. Hwang D K, Kang S H, Lim JH, Yang E J, Oh J Y, Yang JH and Park S J 2005 Appl. Phys. Lett. 86 222101
6. Cozzoli P D, Curri M L, Agostiano A, Leo G and Lomascolo M 2003 J. Phys. Chem. B 107 4576
7. Dijken A V, Meulenkamp E A, Vanmaekelbergh D and Meijerink A 2000 J. Phys. Chem. B 104 1715
8. Monticone S, Tufeu R and Kanaev A V 1998 J. Phys. Chem. B 102 2854
9. Sakohara S, Ishida M and Anderson M A 1998 J. Phys. Chem. B 102 10169
10. Borgohain K and Mahamuni S 1998 Semicond. Sci. Technol. 13 1154
11. Liu M, Kitai A H and Mascher P 1992 J. Lumin. 54 35
12. Zhou H, Alves H, Hofmann D M, Kriegseis W, Meyer B K, Kaczmarczyk G and Hoffmann A 2002 Appl. Phys. Lett. 80 210
13. Xie R G, Sekiguchi T, Ishigaki T, Ohashi N, Li D S, Yang D R, Liu B D and Bando Y 2006 Appl. Phys. Lett. 88 134103
14. Hui K C, An J, Zhang X Y, Xu J B, Dai J Y and Ong H C 2005 Adv. Mater. 17 1960
15. Greene L E, Law M, Goldberger J, Kim F, Johnson J C, Zhang Y, Saykally R J and Yang P 2003 Angew. Chem. Int. Edn 42 3031
16. Li D, Leung Y H, Djuriić A B, Liu Z T, Xie M H, Shi S L, Xu S J and Chan W K 2004 Appl. Phys. Lett. 85 1601
17. Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E and Cantwell G 2002 Appl. Phys. Lett. 81 622
18. Vanheusden K, Seager C H, Warren W L, Tallant D R and Viogt J A 1996 Appl. Phys. Lett. 68 403
19. Djuriić A B, Choy W C H, Roy V A L, Leung Y H, Kwong CY, Cheah K W, Gundu Rao T K, Chan W K, Lui H F and Surya C 2004 Adv. Funct. Mater. 14 856
20. Sengupta G, Ahluwalia H S, Banerjee S and Sen S P 1979 J. Colloid Interface Sci. 69 217
21. Kim D G, Terrshita T, Tanaka I and Nakayama M 2003 Japan. J. Appl. Phys. 42 L935
22. Van de Walle C G 2002 Phys. Status Solidi b 229 221
23. Sekiguchi T, Ohashi N and Terada Y 1997 Japan. J. Appl. Phys. 36 L289
24. Ohashi N, Ishigaki T, Okada N, Sekiguchi T, Sakaguchi I and Haneda H 2002 Appl. Phys. Lett. 80 2869
25. Ohashi N, Ishigaki T, Okada N, Taguchi H, Sakaguchi I, Hishita S, Sekiguchi T and Haneda H 2003 J. Appl. Phys. 93 6386
26. Lee J M, Kim K K, Parka S J and Choi W K 2001 Appl. Phys. Lett. 78 3842
27. Chen Z Q, Kawasuso A, Xu Y, Naramoto H, Yuan X L, Sekiguchi T, Suzuki R and Ohdaira T 2005 Phys. Rev. B 71 115213