Ab initio study of silicon in GW approximation: A direct band gap semiconductor

Progress in Crystal Growth and Characterization of Materials

Volumn 52, Issue 1-2, 2006, Pages 10-14

  Yadav, P S ^a   Yadav, R K ^a   Agrawal, S ^a   Agrawal, B K ^a  

^a UNIVERSITY OF ALLAHABAD   (India)

Author keywords

B1. Elemental solids; B2. Semiconducting silicon; Band gap; Electronic structure; GGA; GW approximation

Indexed keywords

APPROXIMATION THEORY; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; LATTICE CONSTANTS;

BAND GAP; ELEMENTAL SOLIDS; GGA; GW APPROXIMATION;

SEMICONDUCTING SILICON;

EID: 33744529909     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pcrysgrow.2006.03.002     Document Type: Article

References (4)

1. ABINIT code is a common project of the University Cath olique de Louvain, Corning Incorporated and other Contributors, 2003.
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3. Hybertsen M.S., and Louie S.G. Phys. Rev. B34 (1986) 5390
4. Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Landolt-Bornstein, New Series vol. III (1982), Springer-Verlag, New York (Pt. 23a)