Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped films

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1238-1241

  Buršíková, Vilma ^a   Sládek, Petr ^a   St'ahel, Pavel ^a   Buršík, Jiří ^b  

^a MASARYK UNIVERSITY   (Czech Republic)

^b INSTITUTE OF PHYSICS OF MATERIALS   (Czech Republic)

Author keywords

Absorbtion; Amorphous semiconductors; Atomic force and scanning tunneling microscopy; Hardness; Indentation; Mechanical properties; Microindentation; Scanning electron microscopy

Indexed keywords

DOPING (ADDITIVES); HARDNESS; INDENTATION; MECHANICAL PROPERTIES; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

AMORPHOUS SEMICONDUCTORS; ATOMIC FORCE AND SCANNING TUNNELING MICROSCOPY; MICROINDENTATION;

THIN FILMS;

EID: 33744529250     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.114     Document Type: Article

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