Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Yamamoto, T ^b   Nakamura, Y ^b   Pashkin, Yu A ^a   Astafiev, O ^b   Tsai, J S ^b  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COULOMB BLOCKADE; ENERGY GAP; SUPERCONDUCTING DEVICES; THICKNESS CONTROL; THIN FILMS; TRANSPORT PROPERTIES;

COULOMB BLOCKADE DEVICES; FILM THICKNESS; QUASIPARTICLE POISONING; TRANSPORT MEASUREMENTS;

TRANSISTORS;

EID: 33744524959     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207555     Document Type: Article

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