The effect of dislocations in Cd0.96Zn0.04Te single crystal on IR transmittance

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 160-163

  Zha, Gangqiang ^a   Jie, Wanqi ^a   Li, Qiang ^a   Wang, Zewen ^a   Xu, Yadong ^a   Zeng, Dongmei ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Cd0.96Zn0.04Te; Dislocation; IR absorption

Indexed keywords

CADMIUM COMPOUNDS; DEFORMATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SILICON WAFERS; SINGLE CRYSTALS;

CD0.96ZN0.04TE; DANGLING-BOND-ELECTRONS; DISLOCATION DENSITY; IR ABSORPTION;

DISLOCATIONS (CRYSTALS);

EID: 33744520619     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.058     Document Type: Article

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