Effect of conduction band non-parabolicity on the donor states in GaAs-(Al,Ga)As spherical quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 33, Issue 1, 2006, Pages 116-119

  Bose, C ^a   Midya, K ^a   Bose, M K ^b  

^a JADAVPUR UNIVERSITY   (India)

^b South Eastern Railway   (India)

Author keywords

Impurity level; Quantum dot; Semiconductor

Indexed keywords

BINDING ENERGY; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; HEAT CONDUCTION; SEMICONDUCTING GALLIUM ARSENIDE; VARIATIONAL TECHNIQUES;

DONOR STATES; ELECTRONIC ENERGY LEVEL; LUTTINGER-KOHN 'EFFECTIVE MASS'; NON-PARABOLICITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744516575     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.11.012     Document Type: Article

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