Misfit dislocation dipoles in Si/SiGe/Si heterostructures on SOI

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 49-52

  Ma, Tongda ^a   Tu, Hailing ^a   Shao, Beiling ^a   Liu, Ansheng ^a   Hu, Guangyong ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

Dislocation dipole; SRDT; Strain modulation; TEM

Indexed keywords

GERMANIUM COMPOUNDS; HETEROJUNCTIONS; SILICON COMPOUNDS; STRAIN; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

DISLOCATION DIPOLE; SRDT; STRAIN MODULATION;

DISLOCATIONS (CRYSTALS);

EID: 33744513343     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.006     Document Type: Article

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