Microwave characteristics of SiC artificial crystal

Materials Research Bulletin

Volumn 41, Issue 7, 2006, Pages 1279-1286

  Zhang, Hongtao ^a   Zhang, Jinsong ^a   Zhang, Hongyan ^b  

^a INSTITUTE OF METAL RESEARCH   (China)

^b UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CERAMIC CAPACITORS; COMPUTER SIMULATION; MICROWAVES; NUMERICAL METHODS; THERMAL EFFECTS;

ABSORPTION COEFFICIENTS; DIELECTRIC RODS; NUMERICAL CALCULATION; TEMPERATURE STABILITY;

SILICON CARBIDE;

EID: 33744509687     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2006.01.001     Document Type: Article

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