Solution-processed lanthanum zirconium oxide as a barrier layer for high Ic-coated conductors

Journal of Materials Research

Volumn 21, Issue 4, 2006, Pages 910-914

  Sathyamurthy, Srivatsan ^a   Paranthaman, Mariappan ^a   Heatherly, Lee ^a   Martin, Patrick M ^a   Specht, E D ^a   Goyal, Amit ^a   Kodenkandath, Thomas ^b   Li, Xiaoping ^b   Rupich, Martin W ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b AMERICAN SUPERCONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; DEPOSITION; DIFFUSION; EVAPORATION; INORGANIC COATINGS; PHYSICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SOL-GELS; SPUTTERING; TEXTURES;

BARRIER LAYER; LANTHANUM ZIRCONIUM OXIDE; METALORGANIC DEPOSITION (MOD);

LANTHANUM COMPOUNDS;

EID: 33744492053     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0112     Document Type: Article

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