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Volumn 2002-January, Issue January, 2002, Pages 15-20

Modeling gate oxide short defects in CMOS minimum transistors

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GATES (TRANSISTOR); MOS DEVICES;

EID: 33646946398     PISSN: 15301877     EISSN: 15581780     Source Type: Conference Proceeding    
DOI: 10.1109/ETW.2002.1029634     Document Type: Conference Paper
Times cited : (19)

References (17)
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    • (1985) Int. Test Conf. , pp. 544-555
    • Hawkins, C.F.1    Soden, J.M.2
  • 2
    • 0001935747 scopus 로고
    • Test considerations for gate oxide shorts in CMOS ICs
    • J.M. Soden, C.F. Hawkins, "Test considerations for Gate Oxide Shorts in CMOS ICs", Design & Test of Computers, pp. 56-64, 1986.
    • (1986) Design & Test of Computers , pp. 56-64
    • Soden, J.M.1    Hawkins, C.F.2
  • 3
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    • Reliability and electrical properties of gate oxide shorts in CMOS ICs
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    • (1986) Int. Test Conf. , pp. 443-451
    • Hawkins, C.F.1    Soden, J.M.2
  • 4
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    • Defect analysis, test generation and fault simulation for gate oxide shorts in CMOS ICs
    • S.I. Syed, D.M. Wu, "Defect Analysis, Test Generation and Fault Simulation for Gate Oxide Shorts in CMOS ICs", Int. Symp. Circuits and Syst., pp. 2705-2707, 1990.
    • (1990) Int. Symp. Circuits and Syst. , pp. 2705-2707
    • Syed, S.I.1    Wu, D.M.2
  • 6
    • 0026954538 scopus 로고
    • Approach to the analysis of gate oxide shorts in CMOS digital circuits
    • J. Segura, J. Figueras, A. Rubio, "Approach to the Analysis of Gate Oxide Shorts in CMOS Digital Circuits", Microeletron. Reliab., Vol. 32, No 11, pp. 1509-1514, 1992.
    • (1992) Microeletron. Reliab. , vol.32 , Issue.11 , pp. 1509-1514
    • Segura, J.1    Figueras, J.2    Rubio, A.3
  • 7
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    • A detailed analysis of GOS defects in MOS transistors: Testing implications at circuit level
    • J. Segura, C. De Benito, A. Rubio, C.F. Hawkins, "A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level", Int. Test Conf., pp. 544-551, 1995.
    • (1995) Int. Test Conf. , pp. 544-551
    • Segura, J.1    De Benito, C.2    Rubio, A.3    Hawkins, C.F.4
  • 8
    • 0007735543 scopus 로고    scopus 로고
    • A complete analysis of the voltage behaviour of MOS transistor with gate oxide short
    • M. Renovell, J.M. Gallière, F. Azaïs, Y. Bertrand, "A Complete Analysis of the Voltage Behaviour of MOS Transistor with Gate Oxide Short", Defect-Based Testing Work., pp. 5-10, 2001.
    • (2001) Defect-Based Testing Work , pp. 5-10
    • Renovell, M.1    Gallière, J.M.2    Azaïs, F.3    Bertrand, Y.4
  • 10
    • 0035684723 scopus 로고    scopus 로고
    • Boolean and current detection of MOS transistor with gate oxide short
    • M. Renovell, J.M. Gallière, F. Azaïs, Y. Bertrand, "Boolean and Current Detection of MOS Transistor with Gate Oxide Short", Int. Test Conf., pp. 1039-1048, 2001
    • (2001) Int. Test Conf. , pp. 1039-1048
    • Renovell, M.1    Gallière, J.M.2    Azaïs, F.3    Bertrand, Y.4
  • 11
    • 0023595869 scopus 로고
    • Modeling of spot defects in MOS transistors
    • M. Syrzycki, "Modeling of Spot Defects in MOS Transistors", Int. Test Conf., pp. 148-157, 1987.
    • (1987) Int. Test Conf. , pp. 148-157
    • Syrzycki, M.1
  • 12
    • 0024627378 scopus 로고
    • Modeling of gate oxide shorts in MOS transistors
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    • (1989) Trans. on Computer-Aided Design , vol.8 , pp. 193-202
    • Syrzycki, M.1
  • 13
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    • Analysis and modeling of MOS devices with gate oxide short failures
    • J. Segura, A. Rubio, J. Figueras, "Analysis and Modeling of MOS Devices with Gate Oxide Short Failures", Int. Symp. Circuits and Syst., pp. 2164-2167, 1991.
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    • Segura, J.1    Rubio, A.2    Figueras, J.3
  • 16
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    • H. Hao, E.J. McCluskey, "Analysis of Gate Oxide Shorts in CMOS Circuits", Trans. on Computers, Vol. 42, pp. 1510-1516, 1993.
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    • Hao, H.1    McCluskey, E.J.2
  • 17
    • 0030166437 scopus 로고    scopus 로고
    • A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors
    • J. Segura, C. De Benito, A. Rubio, C.F. Hawkins, "A Detailed Analysis and Electrical Modeling of Gate Oxide Shorts in MOS Transistors", JETTA, No 8, pp. 229-239, 1996.
    • (1996) JETTA , Issue.8 , pp. 229-239
    • Segura, J.1    De Benito, C.2    Rubio, A.3    Hawkins, C.F.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.