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Volumn 11, Issue 4, 1993, Pages 1296-1300

Application of a High Density Inductively Coupled Plasma Reactor to Polysilicon Etching

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EID: 33646924965     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.578542     Document Type: Conference Paper
Times cited : (64)

References (14)
  • 4
    • 84957234585 scopus 로고
    • U. S. Patent No, 14 August
    • J. S. Ogle, U. S. Patent No. 4, 948, 458 (14 August 1990).
    • (1990) , vol.948 , Issue.4 , pp. 458
    • Ogle, J.S.1
  • 7
    • 84957239075 scopus 로고
    • University of Toronto, Institute for Aerospace Studies, Report No
    • J. G. Laframboise, University of Toronto, Institute for Aerospace Studies, Report No. 100 (1966).
    • (1966) , Issue.100
    • Laframboise, J.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.