The profile and device characterization of high wafer temperature etched Ir/PZT/Ir stacks

Integrated Ferroelectrics

Volumn 53, Issue , 2003, Pages 333-340

  Marks, S ^a   Almerico, J P ^a   Gay, M K ^b   Celii, F G ^b  

^a Tegal Corporation   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

BST; FeRAM; Ferroelectric; Ir; IrO2; PZT

Indexed keywords

FERROELECTRIC THIN FILMS; IRIDIUM; LEAD COMPOUNDS; PLASMA ETCHING; RANDOM ACCESS STORAGE; TEMPERATURE DISTRIBUTION;

DUAL FREQUENCY PLASMA ETCHING; TEMPERATURE ETCHING; WAFER TEMPERATURE;

WSI CIRCUITS;

EID: 33646913135     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/714040682     Document Type: Review

References (2)

1. CRC Press, Handbook of Chem. and Phys., 64th ed., Sect. B, 65, 103, 135, 151, 157.
2. S. R. Summerfelt et al., "Embedded Ferroelectric Memory with 0.58 micron Cell Size Using 130 nm 5LM Cu/FSG Logic Process," Paper 1.1.5-I; 15th ISIF, 2003.