Electronic properties of silicon nanoneedle structure obtained by RIE for nonvolatile memory applications

Materials Science and Engineering C

Volumn 26, Issue 5-7, 2006, Pages 813-817

  Jung, Sungwook ^a   Yoo, Jinsu ^a   Kim, Yungkuk ^a   Kim, Kyunghae ^a   Dhungel, S K ^a   Yi, J ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Memory; MOS; Nanoneedle; Nanostructure; RIE

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; NONVOLATILE STORAGE; REACTIVE ION ETCHING; SILICON;

MOS; NANONEEDLE; NANONEEDLE SURFACE STRUCTURE; NANOSTRUCTURE;

NANOSTRUCTURED MATERIALS;

EID: 33646911367     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.09.088     Document Type: Article

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