Stark effect on exciton complexes of a single quantum dot embedded in a p-n junction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3927-3932

  Kuo, David M T ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Exciton complexes; Quantum dots; Stark effect

Indexed keywords

COULOMB BLOCKADE; ELECTRIC FIELD EFFECTS; EXCITONS; SEMICONDUCTOR JUNCTIONS; SPONTANEOUS EMISSION;

EFFECTIVE MASS MODEL; EMISSION SPECTRUM; EXCITON COMPLEXES; STARK EFFECT; TRANSITION ENERGIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646907672     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3927     Document Type: Article

References (33)

1. O. Benson, C. Santori, M. Pelton and Y. Yamamoto: Phys. Rev. Lett. 84 (2000) 2513.
2. P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, L. D. Zhang, E. Hu and A. Imamoglu: Science 290 (2000) 2282.
3. Z. Yuan, B. E. Kardynal, R. M. Stevenson, A. J. Shield, C. J. Lobo, K. Cooper, N. S. Beattlie, D. A. Ritchie and M. Pepper: Science 295 (2002) 102.
4. A. Imamoglu and Y. Yamamoto: Phys. Rev. Lett. 72 (1994) 210.
5. C. K. Hahn, J. Motohisa and T. Fukui: Appl. Phys. Lett. 76 (2000) 3947.
6. E. M. Purcell: Phys. Rev. B 69 (1946) 681.
7. J. M. Gerard and B. Gayral: J. Lightwave Technol. 17 (1999) 2089.
8. S. Haroche and D. Kleppner: Phys. Today 42 (1989) 24.
9. K. J. Vahala: Nature 424 (2003) 839.
10. E. Moreau, I. Robert, J. M. Gerard, I. Abram, L. Manin and V. Thierry-Mieg: Appl. Phys. Lett. 79 (2001) 2865.
11. C. Santori, D. Fattal, J. Vuckovic, G. S. Solomon and Y. Yamamoto: Nature 419 (2002) 594.
12. A. Badolato, K. Hennessy, M. Atature, J. Dreiser, E. Hu, P. M. Petroff and A. Imamoglu: Science 308 (2005) 1158.
13. S. Raymond, J. J. Reynolds, J. L. Merz. S. Fafard, Y. Feng and S. Charbonneau: Phys. Rev. B 58 (1998) R13415.
14. M. Sugisaki, H. W. Ren, S. V. Nair, K. Nishi and Y. Masumoto: Phys. Rev. B 66 (2002) 235309.
15. J. J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A. I. Tartakovskii, D. J. Mowbray, M. S. Skolnick, S. L. Liew, A. G. Cullis and M. Hopkinson: Phys. Rev. B 70 (2004) 201308(R).
16. G. W. Wen, J. Y. Lin, H. X. Jiang and Z. Chen: Phys. Rev. B 52 (1995) 5913.
17. K. Chang and J. B. Xiu: Solid State Commun. 104 (1997) 351.
18. H. Fu: Phys. Rev. B 65 (2002) 045320.
19. S. Banerjee and K. A. Shore: J. Appl. Phys. 97 (2005) 123101.
20. R. M. Thompson, R. M. Stvenson, A. J. Shields, I. Farrer, C. J. Lobo, D. A. Ritchie, M. L. Leadbeater and M. Pepper: Phys. Rev. B 64 (2001) 201302.
21. D. M. T. Kuo and Y. C. Chang: J. Phys. Soc. Jpn. 74 (2005) 690.
22. D. M. T. Kuo and Y. C. Chang: Phys. Rev. B 69 (2004) 041306.
23. Here, we considered the effect of strain and the band nonparabolicity, which lead to an enhanced InAs effective mass to be used in the QD; C. Pryor: Phys. Rev. B 57 (1998) 7190.
24. P. Lawaetz: Phys. Rev. B 4 (1971) 3460.
25. S. J. Sun and Y. C. Chang: Phys. Rev. B 62 (2000) 13631.
26. O. Stier, M. Grundmann and D. Bimberg: Phys. Rev. B 59 5688 (1999).
27. Y. Z. Hu, M. Lindberg and S. W. Koch: Phys. Rev. B 42 (1990) 1713.
28. A. Barenco and M. A. Dupertuis: Phs. Rev. B 52 (1995) 2766.
29. E. Dekel, D. Gershoni, E. Ehrenfreund, J. M. Garcia and P. M. Petroff: Phys. Rev. B 61 (2000) 11009.
30. H. Haug and A. P. Jauho: Quantum Kinetics in Transport and Optics of Semiconductors (Springer, Heidelberg, 1996).
31. S. Rodt, R. Heitz, A. Schliwa, R. L. Sellin, F. Guffarth and D. Bimberg: Phys. Rev. B 68 (2003) 035331.
32. L. Landin, M. S. Miller, M. E. Pistol, C. E. Pryor and L. Samuelson: Science 280 (1998) 262.
33. G. A. Narvaez, G. Bester and A. Zunger: Phys. Rev. B 72 (2005) 245318.