Current-assisted domain wall motion in ferromagnetic semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3854-3859

  Yamanouchi, Michihiko ^a   Chiba, Daichi ^a,b   Matsukura, Fumihiro ^a,b   Ohno, Hideo ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

(Ga,Mn)As; (In,Mn)As; Current induced domain wall movement; Field effect transistor; Magnetic coercive force

Indexed keywords

ELECTRIC CURRENTS; FERROMAGNETISM; HALL EFFECT; MAGNETIC FIELDS;

(GA,MN)AS; (IN,MN)AS; CURRENT INDUCED DOMAIN WALL MOVEMENT; MAGNETIC COERCIVE FORCE;

FIELD EFFECT TRANSISTORS;

EID: 33646876199     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3854     Document Type: Article

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