Simulation of resist development profile using thick resist exposure model

Guangdian Gongcheng/Opto-Electronic Engineering

Volumn 33, Issue 4, 2006, Pages 50-54

  Duan, Xi ^a   Yao, Xin ^a   Chen, Ming Yong ^a   Ma, Yan Qin ^a   Liu, Shi Jie ^a   Tang, Xiong Gui ^a   Du, Jing Lei ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

Development profile; Line width; Sidewall angle; Thick resist exposure model

Indexed keywords

EID: 33646866140     PISSN: 1003501X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)