Photoluminescence properties of polycrystalline AgGaTe2

Solar Energy Materials and Solar Cells

Volumn 90, Issue 13, 2006, Pages 1973-1982

  Krustok, J ^a   Jagomagi A ^a   Grossberg, M ^a   Raudoja, J ^a   Danilson, M ^a  

^a TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

AgGaTe2; Deep levels; Defects; Heavily doped semiconductors; Photoluminescence

Indexed keywords

ACTIVATION ENERGY; DEFECTS; DOPING (ADDITIVES); ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; SOLAR ENERGY;

AGGATE2; DEEP LEVELS; HEAVILY DOPED SEMICONDUCTORS; PEAK ENERGIES;

POLYCRYSTALLINE MATERIALS;

EID: 33646836972     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.02.003     Document Type: Article

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