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European Physical Journal B

Volumn 50, Issue 4, 2006, Pages 587-592

Intrinsic tunnelling effects in self-doped la0.89MnO3 single crystals

(6) Markovich, V a Jung, G a Belogolovskii, M b Yuzhelevski, Y a Gorodetsky, G a Mukovskii, Ya M c

a BEN GURION UNIVERSITY OF THE NEGEV (Israel)

b DONETSK PHYSICOTECHNICAL INSTITUTE (Ukraine)

c NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SINGLE CRYSTALS; THERMOANALYSIS; TRANSPORT PROPERTIES;

HIGH VOLTAGES; INTRINSIC TUNNELLING EFFECTS; SELF-DOPING; ZERO BIAS ANOMALY;

MANGANESE COMPOUNDS;

EID: 33646791852 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2006-00178-9 Document Type: Article

Times cited : (4)

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