Analysis of 60 nm diam spin dependent tunneling memory cells with thermally assisted writing

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Pohm, A V ^a   Daughton, J M ^a   Deak, J G ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEATING CURRENT; STORAGE MAGNETIC LAYER; TUNNEL CELL; TUNNELING MEMORY CELLS;

ANISOTROPY; ERROR CORRECTION; MAGNETIC STORAGE; MAGNETIZATION; TUNNEL JUNCTIONS;

DATA STORAGE EQUIPMENT;

EID: 33646755144     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173231     Document Type: Article

References (6)

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4. J. P. Nozieres, S. Jaren, Y. B. Zhang, A. Zelster, K. Pentek, and V. S. Speriosu, J. Appl. Phys. 87, 3920 (2000).
5. T. Lin and D. Mauri, IEEE Trans. Magn. 35, 2607 (1999).
6. A. V. Pohm (private communication). NVE Corporation Progress Report No. DAAH-0103CR243 (unpublished).