Investigation of magnetocrystalline anisotropy by planar Hall effect in GaMnAs epilayers grown on vicinal GaAs substrates

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Lim, W L ^a   Liu, X ^a   Dziatkowski, K ^a,b   Ge, Z ^a   Shen, S ^a   Furdyna, J K ^a   Dobrowolska, M ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECT (AHE); ASYMMETRIC SHIFT; GAMNAS EPILAYERS;

CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; HALL EFFECT; MAGNETIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

MAGNETIC ANISOTROPY;

EID: 33646746580     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158688     Document Type: Article

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