Pressure-induced zero-gap semiconducting state in organic conductor α-(BEDT-TTF)2I3 salt

Journal of the Physical Society of Japan

Volumn 75, Issue 5, 2006, Pages

  Katayama, Shinya ^a   Kobayashi, Akito ^a   Suzumura, Yoshikazu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

(BEDT TTF)2I 3; BEDT TTF; Contact point; Dirac cone; Organic conductor; Quarter filling; Tight binding model; Zero gap semiconductor

Indexed keywords

EID: 33646703099     PISSN: 00319015     EISSN: 00319015     Source Type: Journal    
DOI: 10.1143/JPSJ.75.054705     Document Type: Article

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