Tunable THz detector based on a grating gated field-effect transistor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6120, Issue , 2006, Pages

  Shaner, E A ^a   Lee, Mark ^a   Wanke, M C ^a   Grine, A D ^a   Reno, J L ^a   Allen, S J ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTS OF LATTICE HEATING; HIGH RESPONSIVITY; MAGNITUDE IMPROVEMENTS; PINCHOFF REGIME;

DETECTORS; FIELD EFFECT TRANSISTORS; NATURAL FREQUENCIES; PINCH EFFECT; RESONANT CIRCUITS; TUNING;

PHOTODETECTORS;

EID: 33646677772     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.646089     Document Type: Conference Paper

References (5)

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2. S. J. Allen, D. C. Tsui, R. A. Logan, Phys. Rev. Lett. 38, 980 (1977);
3. D. C. Tsui, E. Gornik, R. A. Logan, Solid. State Comm. 5, 875 (1980)
4. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, Appl. Phys. Lett. 81, 1627 (2002)
5. Mark Lee, M. C. Wanke, and J. L. Reno, Appl. Phys. Lett. 86, 033501 (2005)