MOS and MOSFET with transition metal oxides

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2697, Issue , 1996, Pages 520-527

  Fu, Shelton ^a   Egami, Takeshi ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; ELECTRIC CONDUCTIVITY; MOSFET DEVICES; OXIDE SUPERCONDUCTORS; SINGLE CRYSTALS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

CHEMICALLY DOPED; GATE FIELDS; MOS FETS; MOSFET STRUCTURES; NONLINEAR OPTICAL EFFECTS; ORDERS OF MAGNITUDES;

CARRIER MOBILITY;

EID: 33646647886     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.250262     Document Type: Conference Paper

References (14)

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