Effect of pressure on the first-order Raman intensity in semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 20, 2006, Pages

  Trallero Giner, C ^a,b   Kunc, K ^a,c   Syassen, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF HAVANA   (Cuba)

^c INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646546983     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.205202     Document Type: Article

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