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Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

(3) Matsuura, Tetsuya a Miyamoto, Tomoyuki a Koyama, Fumio a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE ACTIVE AGENTS; TOPOLOGY;

ELONGATION; INAS QUANTUM DOTS; SIZE ENLARGEMENT; SIZE FLUCTUATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646515608 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2200395 Document Type: Article

Times cited : (13)

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