Rate-determining reactions and surface species in CVD silicon. IV. The SiCl4-H2-N2 and the SiHCl3-H2-N2 system

Journal of Crystal Growth

Volumn 57, Issue 1, 1982, Pages 177-184

  Bloem, J ^a   Claassen, W A P ^a   Valkenburg, W G J N ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646461468     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(82)90264-0     Document Type: Article

References (21)

1. Rate-determining reactions and surface species in CVD of silicon
2. A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor