Synthesis and PL properties of ZnSe nanowires with zincblende and wurtzite structures

Chinese Physics Letters

Volumn 23, Issue 5, 2006, Pages 1317-1320

  Xia, Dong Yan ^a   Dai, Lun ^a   Xu, Wan Jin ^a   You, Li Ping ^a   Zhang, Bo Rui ^a   Ran, Guang Zhao ^a   Qin, Guo Gang ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; II-VI SEMICONDUCTORS; NANOWIRES; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; ZINC SELENIDE;

CHEMICAL VAPOR DEPOSITION METHODS; GROWTH CONDITIONS; LUMINESCENCE BAND; PL PROPERTY; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SINGLE-CRYSTALLINE; SYNTHESISED; WURTZITE STRUCTURE; ZINC-BLENDE STRUCTURES; ZNSE NANOWIRES;

ZINC SULFIDE;

EID: 33646398327     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/5/070     Document Type: Article

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