Electronic structure and electron g factors of HgTe quantum dots

Journal of Physics D: Applied Physics

Volumn 39, Issue 9, 2006, Pages 1815-1820

  Zhang, X W ^a   Xia, J B ^a,b  

^a CCAST WORLD LABORATORY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONIC STRUCTURE; ELECTRONS; LUMINESCENCE; MAGNETIC FIELD EFFECTS;

CONDUCTION BAND; EFFECTIVE-MASS APPROXIMATION; ELECTRON G FACTORS; VALENCE BANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646394086     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/9/017     Document Type: Article

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