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Volumn 96, Issue 16, 2006, Pages
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Erratum: Ab Initio Study of Deep Defect States in Narrow Band-Gap Semiconductors: Group III Impurities in PbTe (Phys. Rev. Lett. (2006) 96 (056403))
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Author keywords
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Indexed keywords
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EID: 33646383893
PISSN: 00319007
EISSN: 10797114
Source Type: Journal
DOI: 10.1103/PhysRevLett.96.169907 Document Type: Erratum |
Times cited : (11)
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References (0)
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