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Physical Review Letters

Volumn 96, Issue 17, 2006, Pages

Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs schottky barrier

(2) Salis, G a Alvarado, S F a

a IBM RESEARCH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; INTERFEROMETRY; OPTICAL KERR EFFECT; OSCILLATIONS; POLARIZATION; ROTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SIGNAL INTERFERENCE;

DEPLETION LAYER; METAL-GAAS SCHOTTKY BARRIER; SEMICONDUCTOR SURFACE; SPIN-POLARIZED TRANSPORT;

SCHOTTKY BARRIER DIODES;

EID: 33646362277 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.96.177401 Document Type: Article

Times cited : (6)

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