Influence of a lateral electric field on the optical properties of InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 73-76

  Reuter, D ^a   Stavarache, V ^a   Wieck, A D ^a   Schwab, M ^b   Oulton, R ^b   Bayer, M ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

InAs; Lateral electric field; Quantum dots; Stark effect

Indexed keywords

BINDING ENERGY; ELECTRON EMISSION; EXCITONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

INAS; LATERAL ELECTRIC FIELDS; RED-SHIFT; STARK EFFECT;

ELECTRIC FIELD EFFECTS;

EID: 33646201940     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.017     Document Type: Article

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