Electric-field-induced charge noise in doped silicon: Ionization of phosphorus donors

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Ferguson, A J ^a   Chan, V C ^a   Hamilton, A R ^a   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; IONIZATION; OSCILLATIONS; PHOSPHORUS; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSISTORS;

CHARGE NOISE; LOW-FREQUENCY CHARGE NOISE; PHOSPHORUS DONORS; SINGLE ELECTRON TRANSISTORS (SETS);

SEMICONDUCTING SILICON;

EID: 33646197379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2198013     Document Type: Article

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