Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 375-378

  Sankowski, P ^a   Kacman, P ^a   Majewski, J ^b   Dietl, T ^a,b  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

Spin polarization; Tunneling magnetoresistance; Zener tunneling

Indexed keywords

CARRIER CONCENTRATION; MAGNETORESISTANCE; MANGANESE COMPOUNDS; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; ZENER DIODES;

MAGNETIC ION CONTENT; SPIN POLARIZATION; TUNNELING MAGNETORESISTANCE; ZENER TUNNELING;

HETEROJUNCTIONS;

EID: 33646196681     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.074     Document Type: Article

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