Two distinct dielectric relaxation mechanisms in the low-frequency range in Bi5 TiNbW O15 ceramics

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Yi, Z G ^a,b   Li, Y X ^a   Wang, Y ^a,b   Yin, Q R ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC RELAXATION; ELECTRIC IMPEDANCE; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; IONIC CONDUCTION; POINT DEFECTS; POSITIVE IONS;

BI5 TINBW O15 CERAMICS; GRAIN BOUNDARY RELAXATION; OXYGEN ION CONDUCTIVITY; TEMPERATURE DEPENDENCE;

CERAMIC MATERIALS;

EID: 33646196497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191953     Document Type: Article

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