Defect-related emission in CdS films grown directly on hydrogen-terminated Si(111) substrates

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 803-806

  Seto, S ^a   Kuroda, T ^b   Suzuki, K ^c  

^a ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; CONDUCTIVE FILMS; HYDROGEN; PHOTOLUMINESCENCE; SILICON; EPITAXIAL FILMS; EPITAXIAL GROWTH; ZINC SULFIDE;

EMISSION MECHANISM; EPITAXIAL FILMS; EXCITATION INTENSITY;

FILM GROWTH; DEFECTS;

68.55.LN; 78.55.ET; DEFECT-RELATED EMISSION; EXCITATION INTENSITY; HETEROEPITAXIAL FILMS; HYDROGEN-TERMINATED SI(111); PHOTOLUMINESCENCE SPECTRUM; ZINC-BLENDE STRUCTURES;

EID: 33646190471     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564611     Document Type: Conference Paper

References (8)

1. P. J. Dean, phys. stat. sol. (a) 81, 625 (1984).
2. K. Wolf, A. Naumov, T. Reisinger, M. Kastner, H. Stanzl, W. Kuhn, and W. Gebhardt, J. Cryst. Growth 135, 113 (1994).
3. A. Naumov, K. Wolf, T. Reisinger, H. Stanzl, H. P. Wagner, and W. Gebhardt, Physica B 185, 250 (2003).
4. P. J. Dean, G. M. Williams, and G. Blackmore, J. Phys. D: Appl. Phys. 17, 2291 (1984).
5. C. Onodera and T. Taguchi, J. Cryst. Growth 101, 502 (1990).
6. T. Taguchi, T. Kusao, and A. Hiraki, J. Cryst. Growth 72, 46 (1985).
7. S. Seto, Y. Nosho, T. Kousho, H. Kitani, and S. Yamada, Jpn. J. Appl. Phys. 42, L1123 (2003).
8. S. Seto, Jpn. J. Appl. Phys. 44, 5913 (2005).