Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in Al x Ga 1-x As/GaAs modulation-doped heterostructures

Applied Surface Science

Volumn 252, Issue 12, 2006, Pages 4146-4153

  Im, H C ^a   Kim, J H ^a   Oh, D H ^a   Kim, T W ^a   Yoo, K H ^b   Kim, M D ^c  

^a Hanyang University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Chungnam National University   (South Korea)

Author keywords

Activation energy; InAs GaAs quantum dot; Interband transition

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

INAS/GAAS QUANTUM DOT; INTERBAND TRANSITION; QUANTUM DOT (QD) ARRAYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646181544     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.06.023     Document Type: Article

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