Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 1, 2006, Pages 91-95

  Zhou, Xincui ^a   Ye, Zhizhen ^a   Chen, Fugang ^a   Xu, Weizhong ^a   Miao, Yan ^a   Huang, Jingyun ^a   Lu, Jianguo ^a   Zhu, Liping ^a   Zhao, Binghui ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Metalorganic chemical vapor deposition; P type ZnO; Phosphorus doping

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; TEMPERATURE; THIN FILMS;

GLASS SUBSTRATES; HALL MOBILITY; P TYPE ZINC OXIDE; PREPARATION; RESISTIVITY;

ZINC OXIDE;

EID: 33646161459     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. xO crystal films grown on Si(111) substrates. J Cryst Growth, 2003, 256(1): 78
2. Wong E C, Searon P C. ZnO quantum particle thin films fabricated by electrophoretic deposition. Appl Phys Lett, 1999, 74(20): 2939
3. Kohan A F, Ceder G, Morgan D, et al. First-principles study of native point defects in ZnO. Phys Rev B, 2000, 61(22): 15019
4. Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO. Phys Rev Lett, 1999, 82(12): 2552
5. Minegishi K, Koiwai Y, Kikuchi Y, et al. Growth of p-type zinc oxide films by chemical vapor deposition. Jpn J Appl Phys, 1997, 36: L1453
6. Lu J G, Ye Z Z, Zhuge F, et al. p-type conduction in N-Al codoped ZnO thin films. Appl Phys Lett, 2004, 85(15): 3134
7. Xu W Z, Ye Z Z, Zhou T, et, al. MOCVD growth of p-type ZnO thin films by using NO as the dopant source. Chinese Journal of Semiconductors, 2005, 26(1): 38 (in chinese)
8. Joseph M, Tabata H, Kawai T. p-type electrical conduction in ZnO thin films by Ga and N co-doping. Jpn J Appl Phys, 1999, 38: 2505
9. Look D C, Renolds D C, Litton C W, et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy. Appl Phys Lett, 2002, 81(10): 1830
10. Singh A V, Mefra R M, Wakaha A, et al. p-type conduction in codoped ZnO thin films. J Appl Phys, 2003, 93(12): 396
11. Barnes T M, Olson K, Wolden C A, et al. On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Appl Phys Lett, 2005, 86(11): 112112
12. Aoki T, Hatanaka Y, Look D C. ZnO diode fabricated by excimer-laser doping. Appl Phys Lett, 2000, 76(22): 3257
13. Kim K K, Kim H S, Hwang D K, et al. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant. Appl Phys Lett, 2003, 83(1): 63
14. Bang K H, Hwang D K, Park M C, et al. Formation of p-type ZnO film on InP substrate by phosphor doping. Appl Surf Sci, 2003, 210(3): 177
15. Ryu Y R, Lee T S, White H W. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition. Appl Phys Lett, 2003, 83(1): 87
16. Aoki T, Shimizu Y, Miyake A, et al. p-Type ZnO layer formation by excimer laser doping. Phys Status Solidi B, 2002, 229(2): 911
17. Lim W T, Lee C H. Highly oriented ZnO thin films deposited on Ru/Si substrates. Thin Solid Films, 1999, 353(1): 12
18. Lu J G, Ye Z Z, Huang J Y, et al. Influence of postdeposition annealing on the crystallinity of zinc oxide films. Chinese Journal of Semiconductors, 2003, 24(7): 729 (in Chinese)
19. Park C H, Zhang S B, Wei S H. Origin of p-type doping difficulty in ZnO: The impurity perspective. Phys Rev B, 2002, 66(7): 073202
20. Limpijumnong S, Zhang S B, Wei S H, et al. Doping by large-size-mismatched impurities: The microscopic origin of arsenic- or antimony-doped p-type zinc oxide. Phys Rev Lett, 2004, 92(15): 155504
21. Carballda-Galicia D M, Castando-Perz R, Jimenez-Sandoval O, et al. High transmittance CdO thin films obtained by the sol-gel method. Thin Solid Films, 2000, 371(3): 105