Photo current through SnO2/SiC/p-Si(100) structures

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 385-388

  Nishikawa, Syuhei ^a   Hashimoto, Hideaki ^a   Chikamoto, Motonori ^a   Horikoshi, Kosuke ^a   Aoki, Minoru ^a   Arima, Kenta ^a   Uchikosi, Junichi ^a   Morita, Mizuho ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition (CVD); Electrical properties and measurements; Silicon; Silicon carbide

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; PHOTOCURRENTS; PHOTODETECTORS; VOLTAGE MEASUREMENT;

AL/SIC/P-SI STRUCTURE; DARK CURRENT; ELECTRICAL PROPERTIES AND MEASUREMENTS; MONOMETHYLSILANE GAS;

TIN COMPOUNDS;

EID: 33646115447     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.324     Document Type: Article

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