-
1
-
-
0000997318
-
Hydrodynamic electron-transport model: nonparabolic corrections to the streaming terms
-
Woolard D.L., Tian H., Trew R.J., Littlejohn M.A., and Kim W. Hydrodynamic electron-transport model: nonparabolic corrections to the streaming terms. Phys. Rev. B 44 (1991) 11119-11132
-
(1991)
Phys. Rev. B
, vol.44
, pp. 11119-11132
-
-
Woolard, D.L.1
Tian, H.2
Trew, R.J.3
Littlejohn, M.A.4
Kim, W.5
-
2
-
-
0027574577
-
A critical examination of the assumptions underlying macroscopic transport equations for silicon device
-
Stettler M.A., Alam M.A., and Lundstrom M.S. A critical examination of the assumptions underlying macroscopic transport equations for silicon device. IEEE Trans. Electron Devices 40 4 (1993) 733-739
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, Issue.4
, pp. 733-739
-
-
Stettler, M.A.1
Alam, M.A.2
Lundstrom, M.S.3
-
5
-
-
0030534703
-
Moment closure hierarchies for kinetic theories
-
Levermore C.D. Moment closure hierarchies for kinetic theories. J. Stat. Phys. 83 (1996) 331-407
-
(1996)
J. Stat. Phys.
, vol.83
, pp. 331-407
-
-
Levermore, C.D.1
-
6
-
-
0031519460
-
Moment equations in the kinetic theory of gases and wave velocities
-
Boillat G., and Ruggeri T. Moment equations in the kinetic theory of gases and wave velocities. Continuum Mech. Thermodyn. 9 (1997) 205-212
-
(1997)
Continuum Mech. Thermodyn.
, vol.9
, pp. 205-212
-
-
Boillat, G.1
Ruggeri, T.2
-
7
-
-
0000505779
-
Improved hydrodynamical model for carrier transport in semiconductors
-
Anile A.M., and Muscato O. Improved hydrodynamical model for carrier transport in semiconductors. Phys. Rev. B 51 (1995) 16728-16740
-
(1995)
Phys. Rev. B
, vol.51
, pp. 16728-16740
-
-
Anile, A.M.1
Muscato, O.2
-
8
-
-
0042715497
-
Nonlinear closures for hydrodynamical semiconductor transport models
-
Anile A.M., and Trovato M. Nonlinear closures for hydrodynamical semiconductor transport models. Phys. Lett. A 230 (1997) 387-395
-
(1997)
Phys. Lett. A
, vol.230
, pp. 387-395
-
-
Anile, A.M.1
Trovato, M.2
-
9
-
-
0033438601
-
Nonparabolic band transport in semiconductors: closure of the moment equations
-
Anile A.M., and Romano V. Nonparabolic band transport in semiconductors: closure of the moment equations. Continuum Mech. Thermodyn. 11 (1999) 307-325
-
(1999)
Continuum Mech. Thermodyn.
, vol.11
, pp. 307-325
-
-
Anile, A.M.1
Romano, V.2
-
10
-
-
0034346648
-
Nonparabolic band transport in semiconductors: closure of the production terms
-
Romano V. Nonparabolic band transport in semiconductors: closure of the production terms. Continuum Mech. Thermodyn. 12 (2000) 31-51
-
(2000)
Continuum Mech. Thermodyn.
, vol.12
, pp. 31-51
-
-
Romano, V.1
-
11
-
-
0036644809
-
A non-linear determination of the distribution function of degenerate gases with an application to semiconductors
-
Mascali G., and Trovato M. A non-linear determination of the distribution function of degenerate gases with an application to semiconductors. Physica A 310 (2002) 121-138
-
(2002)
Physica A
, vol.310
, pp. 121-138
-
-
Mascali, G.1
Trovato, M.2
-
12
-
-
0030548243
-
Extended thermodynamics tested beyond the linear regime: the case of electron transport in silicon semiconductors
-
Anile A.M., and Muscato O. Extended thermodynamics tested beyond the linear regime: the case of electron transport in silicon semiconductors. Continuum Mech. Thermodyn. 8 (1996) 131-142
-
(1996)
Continuum Mech. Thermodyn.
, vol.8
, pp. 131-142
-
-
Anile, A.M.1
Muscato, O.2
-
13
-
-
0033676705
-
Moment equations with maximum entropy closure for carrier transport in semiconductor devices: validation in bulk silicon
-
Anile A.M., Muscato O., and Romano V. Moment equations with maximum entropy closure for carrier transport in semiconductor devices: validation in bulk silicon. VLSI Design 10 4 (2000) 335-354
-
(2000)
VLSI Design
, vol.10
, Issue.4
, pp. 335-354
-
-
Anile, A.M.1
Muscato, O.2
Romano, V.3
-
14
-
-
0000697880
-
Full nonlinear closure for a hydrodynamic model of transport in silicon
-
Trovato M., and Falsaperla P. Full nonlinear closure for a hydrodynamic model of transport in silicon. Phys. Rev. B 57 8 (1998) 4456-4471
-
(1998)
Phys. Rev. B
, vol.57
, Issue.8
, pp. 4456-4471
-
-
Trovato, M.1
Falsaperla, P.2
-
15
-
-
0032613775
-
Maximum entropy principle for hydrodynamic transport in semiconductors devices
-
Trovato M., and Reggiani L. Maximum entropy principle for hydrodynamic transport in semiconductors devices. J. Appl. Phys. 85 8 (1999) 4050-4065
-
(1999)
J. Appl. Phys.
, vol.85
, Issue.8
, pp. 4050-4065
-
-
Trovato, M.1
Reggiani, L.2
-
16
-
-
0034450587
-
Extended hydrodynamical model of carrier transport in semiconductors
-
Anile A.M., Romano V., and Russo G. Extended hydrodynamical model of carrier transport in semiconductors. SIAM J. Appl. Math. 61 (2000) 74-85
-
(2000)
SIAM J. Appl. Math.
, vol.61
, pp. 74-85
-
-
Anile, A.M.1
Romano, V.2
Russo, G.3
-
17
-
-
0035690629
-
Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle
-
Muscato O., and Romano V. Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle. VLSI Design 13 (2001) 273-279
-
(2001)
VLSI Design
, vol.13
, pp. 273-279
-
-
Muscato, O.1
Romano, V.2
-
18
-
-
0037050815
-
2D Simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
-
Romano V. 2D Simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle. J. Comput. Phys. 176 (2002) 70-92
-
(2002)
J. Comput. Phys.
, vol.176
, pp. 70-92
-
-
Romano, V.1
-
20
-
-
0024926684
-
-
W. Lee, S.E. Laux, M.V. Fischetti, D.T. Tang, Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors, IEDM Tech. Dig. (1989) 473-476.
-
-
-
-
22
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
-
Jacoboni C., and Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55 (1983) 645-705
-
(1983)
Rev. Mod. Phys.
, vol.55
, pp. 645-705
-
-
Jacoboni, C.1
Reggiani, L.2
-
26
-
-
0348246621
-
+ silicon diode
-
+ silicon diode. COMPEL 19 3 (2000) 812-828
-
(2000)
COMPEL
, vol.19
, Issue.3
, pp. 812-828
-
-
Muscato, O.1
-
27
-
-
0025457187
-
Monte Carlo analysis of semiconductor devices: the DAMOCLES program
-
Laux S.E., Fischetti M.V., and Frank D.J. Monte Carlo analysis of semiconductor devices: the DAMOCLES program. IBM J. Res. Develop. 34 (1990) 466-494
-
(1990)
IBM J. Res. Develop.
, vol.34
, pp. 466-494
-
-
Laux, S.E.1
Fischetti, M.V.2
Frank, D.J.3
-
28
-
-
0002146386
-
Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program
-
Karl Hess (Ed), Kluwer Academic, Boston
-
Laux S.E., and Fischetti M.V. Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program. In: Karl Hess (Ed). Monte Carlo Device Simulation: Full Band and Beyond (1991), Kluwer Academic, Boston 1-26
-
(1991)
Monte Carlo Device Simulation: Full Band and Beyond
, pp. 1-26
-
-
Laux, S.E.1
Fischetti, M.V.2
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