Atomic and electronic structures of rubidium adsorption on Si(0 0 1)(2 × 1) surface: Comparison with Cs/Si(0 0 1) surface

Chemical Physics

Volumn 323, Issue 2-3, 2006, Pages 383-390

  Xiao, H Y ^a   Zu, X T ^a,b   Zhang, Y F ^c   Gao, Fei ^d  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c FUZHOU UNIVERSITY   (China)

^d PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Adsorption; First principles calculations; Rubidium; Silicon

Indexed keywords

EID: 33646058597     PISSN: 03010104     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.chemphys.2005.10.003     Document Type: Article

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