Present status and future prospects of LEEPL

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 738-748

  Utsumi, Takao ^a  

^a Nanolith LLC   (Japan)

Author keywords

High throughput; Low energy e beam lithography; Low power; NGL; Proximity

Indexed keywords

ELECTRONICS INDUSTRY; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH THROUGHPUT; LOW ENERGY E-BEAM LITHOGRAPHY; LOW POWER; NGL; PROXIMITY;

ELECTRON BEAM LITHOGRAPHY;

EID: 33646040110     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.269     Document Type: Article

References (3)

1. Utsumi T. J. Vac. Sci. Technol. B 17 6 (1999)
2. Bohlen H., Beringer U., Keyser J., Nehmiz P., Zapka W., and Kulcke W. Solid State Technol. 22 (1984) 210
3. U.S. Patent No.5, 831,272, Japanese Patent No.2, 951,947, German Patent No.1, 9.848.070.