A study of 193-nm immersion lithography using novel high refractive index fluids

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 651-654

  Santillan, Julius ^a   Otoguro, Akihiko ^a   Itani, Toshiro ^a   Fujii, Kiyoshi ^a   Kagayama, Akifumi ^b   Nakano, Takashi ^b   Nakayama, Norio ^b   Tamatani, Hiroaki ^b   Fukuda, Shin ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b MITSUI CHEMICALS INC   (Japan)

Author keywords

193 nm; Fluids; High refractive index; Immersion lithography

Indexed keywords

ABSORPTION; ELLIPSOMETRY; FLUIDS; INTERFEROMETRY; REFRACTIVE INDEX; SPECTROSCOPIC ANALYSIS;

193-NM; HIGH REFRACTIVE INDEX; IMMERSION LITHOGRAPHY;

LITHOGRAPHY;

EID: 33646019567     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.028     Document Type: Article

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