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Volumn 14, Issue 3, 2006, Pages 225-235

Optical and electrical properties of laser texturing for high-efficiency solar cells

Author keywords

Laser; Multicrystalline; Silicon; Texture

Indexed keywords

CRYSTALLINE MATERIALS; LASER APPLICATIONS; OPTICAL PROPERTIES; SILICON SOLAR CELLS; SILICON WAFERS;

EID: 33646017376     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.667     Document Type: Article
Times cited : (117)

References (12)
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    • Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method
    • Inomata Y, Fukui K, Shirasawa K. Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method. Solar Energy Materials and Solar Cells 1997; 48: 237-242.
    • (1997) Solar Energy Materials and Solar Cells , vol.48 , pp. 237-242
    • Inomata, Y.1    Fukui, K.2    Shirasawa, K.3
  • 5
    • 0039161467 scopus 로고
    • 16-7% efficient, laser textured, buried contact polycrystalline silicon solar cell
    • Zolper JC, Narayanan S, Wenham SR, Green MA. 16-7% efficient, laser textured, buried contact polycrystalline silicon solar cell. Applied Physics Letters 1989; 55(22): 2363-2365.
    • (1989) Applied Physics Letters , vol.55 , Issue.22 , pp. 2363-2365
    • Zolper, J.C.1    Narayanan, S.2    Wenham, S.R.3    Green, M.A.4
  • 8
    • 0019607921 scopus 로고
    • Laser damage gettering and its application to lifetime improvement in silicon
    • Hayafuji Y, Yanada T, Aoki Y. Laser damage gettering and its application to lifetime improvement in silicon. Journal of the Electrochemical Society 1981; 128(9): 1975-1980.
    • (1981) Journal of the Electrochemical Society , vol.128 , Issue.9 , pp. 1975-1980
    • Hayafuji, Y.1    Yanada, T.2    Aoki, Y.3
  • 10
    • 0000612857 scopus 로고    scopus 로고
    • Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
    • Nagel H, Berge C, Aberle AG. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. Journal of Applied Physics 1999; 86(11): 6218-6221.
    • (1999) Journal of Applied Physics , vol.86 , Issue.11 , pp. 6218-6221
    • Nagel, H.1    Berge, C.2    Aberle, A.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.