Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 8-11, 2006, Pages

  Lee, Sung Hyun ^b   Hong, Wan Shick ^b   Kim, Jong Man ^a   Lim, Hyuck ^a   Park, Kuyng Bae ^a   Cho, Chul Lae ^b   Lee, Kyung Eun ^b   Kim, Do Young ^a   Jung, Ji Sim ^a   Kwon, Jang Yeon ^a   Noguchi, Takashi ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sejong University   (South Korea)

Author keywords

Amorphous silicon (a Si); Catalytic CVDD (CAT CVD); Excimer laser annealing (ELA); Hydrogen content (CH); Low temperature deposition; Polycrystalline silicon (poly Si); Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DEHYDROGENATION; EXCIMER LASERS; FIELD EFFECT TRANSISTORS; POLYSILICON;

ACTIVE MATRIX DISPLAY; CATALYTIC CVDD (CAT-CVD); EXCIMER LASER ANNEALING; HYDROGEN CONTENT; LOW TEMPERATURE DEPOSITION;

THIN FILM TRANSISTORS;

EID: 33645986171     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L227     Document Type: Article

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